Germanium Transistor Leakage Current at James Frary blog

Germanium Transistor Leakage Current. unlike silicon transistors, small to moderate increases in temperature can cause drastic bias changes when using germanium. a leakage current i leak of the collector junction also contributes to the collector current i c. The leakage current icbo is measured first. the suppressed leakage current (i off) and ambipolar current (i ambi) are 9.49 × 10 −14 a/µm and 1.95 × 10 −12. Then the base current ib is measured at fixed collector current ic (eg. thanks to germanium’s small bandgap, a transistor with a germanium channel could require as little as a quarter. there are no leakage currents in the transistor with its two diodes if one electrode is open at a time.

Simulated SUBD leakagecurrent components versus the reversebias
from www.researchgate.net

Then the base current ib is measured at fixed collector current ic (eg. a leakage current i leak of the collector junction also contributes to the collector current i c. thanks to germanium’s small bandgap, a transistor with a germanium channel could require as little as a quarter. unlike silicon transistors, small to moderate increases in temperature can cause drastic bias changes when using germanium. The leakage current icbo is measured first. the suppressed leakage current (i off) and ambipolar current (i ambi) are 9.49 × 10 −14 a/µm and 1.95 × 10 −12. there are no leakage currents in the transistor with its two diodes if one electrode is open at a time.

Simulated SUBD leakagecurrent components versus the reversebias

Germanium Transistor Leakage Current thanks to germanium’s small bandgap, a transistor with a germanium channel could require as little as a quarter. thanks to germanium’s small bandgap, a transistor with a germanium channel could require as little as a quarter. The leakage current icbo is measured first. Then the base current ib is measured at fixed collector current ic (eg. the suppressed leakage current (i off) and ambipolar current (i ambi) are 9.49 × 10 −14 a/µm and 1.95 × 10 −12. unlike silicon transistors, small to moderate increases in temperature can cause drastic bias changes when using germanium. a leakage current i leak of the collector junction also contributes to the collector current i c. there are no leakage currents in the transistor with its two diodes if one electrode is open at a time.

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